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mga-638p8 high linearity low noise amplifi er data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 100 v esd human body model = 350 v refer to avago application note a004r: electrostatic discharge, damage and control. description avago technologies mga-638p8 is an economical, easy- to-use gaas mmic low noise amplifi er (lna). this lna has low noise and high linearity achieved through the use of avago technologies proprietary 0.25 ? m gaas enhancement-mode phemt process. it is housed in the miniature 2.0 x 2.0 x 0.75 mm 3 8-pin dual-flat-non-lead (dfn) package. the device is designed for optimum use from 2.5 ghz up to 4.0 ghz. the compact footprint and low profi le coupled with low noise, high gain and high linearity make this an ideal choice as a low noise amplifi er for cellular infrastructure applications such as lte, gsm, cdma, w-cdma, cdma2000 & td-scdma. for optimum performance at lower frequency from 450 mhz up to 1.5 ghz, mga-636p8 is recommended. for optimum perfor- mance from 1.5 ghz up to 2.5 ghz, mga-637p8 is recom- mended. all these 3 products, mga-636p8, mga-637p8 and mga-638p8 share the same package and pinout con- fi guration. pin confi guration and package marking 2.0 x 2.0 x 0.75 mm 3 8-lead dfn features ?? high linearity performance. ?? low noise figure. ?? gaas e-phemt technology [1] . ?? low cost small package size. ?? integrated with active bias and option to access fet gate. ?? integrated power down control pin. specifi cations 2.5 ghz; 4.8 v, 84 ma ?? 17.3 db gain ?? 0.87 db noise figure ?? 14 db input return loss ?? ? 22.6 dbm input ip3 ?? ? 22.2 dbm output power at 1 db gain compression applications ?? cellular infrastructure applications such as lte, gsm, cdma, w-cdma, cdma2000 & td-scdma. ?? other low noise applications. note: 1. enhancement mode technology employs positive vgs, thereby eliminating the need of negative gate voltage associated with con- ventional depletion mode devices. pin 1 C not used pin 5 C vbias1 pin 2 C rfinput pin 6 C pwrdwn pin 3 C vbias2 pin 7 C rfoutput pin 4 C not used pin 8 C not used center paddle C gnd top view bottom view [2] [1] [3] [4] [7] [8] [6] [5] 38x [2] [1] [3] [4] [7] [8] [6] [5] gnd note: package marking provides orientation and identifi cation 38 = product code x = month code it is recommended to ground pin1, 4 and 8 which are not used.
2 note: 1. device is turned on when pwrdwn pin is applied with 0 v or left open. device is turned off when pwrdwn pin is applied with 3.3 v absolute maximum rating [1] t a =25 c symbol parameter units absolute maximum v dd device voltage, rf output to ground v 5.5 i dd drain current ma 125 vbias1 bias voltage v 5.5 v pwrdwn power down voltage v 5.5 p in,max cw rf input power dbm +24 p diss total power dissipation w 0.61 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [2] (v dd = 4.8 v, i dd = 84 ma) ? jc = 67c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. thermal resistance measured using infra-red measurement technique. 3. power dissipation with unit turned on. board temperature t c is 25 c. derate at 14.9 mw/c for t c > 105.8 c. simplifi ed schematic [1] rfin bias rfout l2 l1 r1 c2 [5] [vbias1] [6] [pwrdwn] [7] [rfoutput] [8] [nu] [4] [nu] [3] [vbias2] [2] [rfinput] [1] [nu] r2 c6 c7 c3 c4 c5 rb c1 l3 vbias1 c8 pwrdwn vdd
3 electrical specifi cations [1,4] t a = 25 c, vdd = vbias1 = 4.8 v, rf measurement at 2.5 ghz, measured on demo board in figure 5 with component listed in table1. symbol parameter and test condition units min. typ. max. idd bias current ma 60 84 110 i pwrdwn current at v pwrdwn pin when v pwrdwn = 3.3 v (power down mode) ma C 0.15 C gain gain db 16 17.3 19 nf [2] noise figure db C 0.87 1.15 iip3 [3] input third order intercept point dbm 21 22.6 C op1db output power at 1db gain compression dbm C 22.2 C irl input return loss, 50 ? source db C 14 C orl output return loss, 50 ? load db C 10 C notes: 1. measurements at 2.5 ghz obtained using demo board described in figure 5. 2. for nf data, board losses of the input have not been de-embedded. 3. iip3 test condition: f rf1 = 2.500 ghz, f rf2 = 2.501 ghz with input power of -10 dbm per tone. 4. use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. see absolute maximum ratings a nd application note for more details. product consistency distribution charts [1, 2] figure 1. idd, lsl = 60 ma , nominal = 84 ma, usl = 110 ma figure 2. nf, nominal = 0.87 db, usl = 1.15 db figure 3. iip3, lsl = 21 dbm, nominal = 22.6 dbm figure 4. gain, lsl = 16 db, nominal = 17.3 db, usl = 19 db notes: 1. distribution data sample size is 500 samples taken from 3 diff erent wafer lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. circuit trace losses have not been de-embedded from measurements above. 50 60 80 90 110 100 70 lsl usl usl 0.7 0.8 0.9 1 1.1 1.2 lsl 22 23 20 21 24 lsl usl 25 16 17 18 19
4 demo board layout figure 5. demo board layout diagram demo board schematic figure 6. demo board schematic diagram table 1. component list for 2.5 ghz matching part size value detail part number c1 0402 1.8 pf (murata) grm1555c1h1r8cb01d c2 0402 100 pf (murata) grm1555c1h101jd01d c5, c6, c7, c8 0603 4.7 ? f (murata) grm188r60j475ke19d c3, c4 0402 not used l1 0402 8.2 nh (toko) llp1005-fh8n2c l2 0402 5.6 nh (toko) llp1005-fh5n6c l3 0402 1.8 nh (toko) llp1005-fh1n8c rb 0402 680 ohm (rohm) mcr004yzpj680 r1 0402 51 ohm (rohm) mcr004yzpj510 r2 0402 0 ohm (rohm) mcr01mzpj000 notes: c1, c2 are dc blocking capacitors c1, l1, l3 input match for nf l2 output match for ip3 c5, c6, c7, c8 are bypass capacitors r1 is a stabilizing resistor rb is the biasing resistor C recommended pcb material is 10 mils rogers ro4350. C suggested component values may vary according to layout and pcb material. notes: ? the schematic is shown with the assumption that similar pcb is used for all mga-636p8, mga-637p8 and mga-638p8. ? detail of the components needed for this product is shown in table 1. truth table v pwrdwn (v) lna mode 0 or open power down mode 3.3 rb c7 c4 c6 c8 c5 r1 c3 l2 l1 vdd pwrdwn vbias1 avago technologies bts lna nov 2010 rfin rfout c1 c2 l3 rfin bias rfout l2 l1 r1 c2 [5] [vbias1] [6] [pwrdwn] [7] [rfoutput] [8] [nu] [4] [nu] [3] [vbias2] [2] [rfinput] [1] [nu] r2 c6 c7 c3 c4 c5 rb c1 l3 vbias1 c8 pwrdwn vdd
5 typical performance rf performance at t a = 25 c, vdd = 4.8 v, idd = 84 ma, measured using 50 ohm input and output board unless stated otherwise. iip3 test condition: f rf1 -f rf2 = 1 mhz with input power of -10 dbm per tone. figure 7. fmin vs idd at 4.8 v at 2.5 ghz figure 8. fmin vs idd at 4.8 v at 2 ghz figure 9. gain vs idd at 4.8 v tuned for optimum iip3 and fmin at 2.5 ghz figure 10. gain vs idd at 4.8 v tuned for optimum iip3 and fmin at 2 ghz figure 11. iip3 vs idd at 4.8 v tuned for optimum iip3 and fmin at 2.5 ghz figure 12. iip3 vs idd at 4.8 v tuned for optimum iip 3 and fmin at 2 ghz 0.3 0.4 0.5 0.6 0.7 0.8 0.9 60 80 84 90 100 idd (ma) fmin (db) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 60 80 84 90 100 idd (ma) fmin (db) 0 2 4 6 8 10 12 14 16 18 20 22 60 80 84 90 100 idd (ma) gain(db) 0 2 4 6 8 10 12 14 16 18 20 22 60 80 84 90 100 idd (ma) gain(db) 0 5 10 15 20 25 30 35 60 80 84 90 100 idd (ma) iip3 (dbm) 0 5 10 15 20 25 30 35 60 80 84 90 100 idd (ma) iip3 (dbm)
6 figure 13. fmin vs frequency and idd at 4.8 v figure 14. gain vs frequency for optimum iip3 and fmin at 4.8 v 84 ma figure 15. iip3 vs frequency for optimum iip3 and fmin at 4.8 v 84 ma 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.9 2 2.2 2.5 2.7 3.3 3.5 frequency (ghz) fmin (db) 0 2 4 6 8 10 12 14 16 18 20 22 1.9 2 2.2 2.5 2.7 3.3 3.5 frequency (ghz) gain (db) 0 5 10 15 20 25 30 35 1.9 2 2.2 2.5 2.7 3.3 3.5 frequency (ghz) iip3 (dbm) 100 ma 84 ma 70 ma
7 figure 16. rfinput and rfoutput reference plane below is the table showing the mga-638p8 refl ection coeffi cient parameters tuned for maximum iip3, vdd = 4.8 v, idd = 84 ma. frequency (ghz) gamma load position iip3 (dbm) magnitude angle 1.9 0.45 -69.6 26.8 2 0.54 -68.1 28.2 2.2 0.45 -69.8 31 2.5 0.45 -58 30 2.7 0.36 -57.7 31.4 3.3 0.18 -89.9 32.1 3.5 0.18 -59.9 34 notes: 1. the maximum iip3 values are calculated based on load pull measurements on approximately 100 diff erent impedances using focus load pull test system. 2. measurements are conducted on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfin pin and the output reference plane is at the end of the rfout pin as shown in figure 16. rfinput reference plane rfoutput reference plane [2] [rfinput] [1] [nu] [3] [vbias2] [4] [nu] [7] [rfoutput] [8] [nu] [6] [pwrdwn] [5] [vbias1] bias
8 typical performance rf performance at t a = 25 c, vdd = vbias1 = 4.8 v, idd = 84 ma, lna mode, measured on demo board in figure 5. signal = cw unless stated otherwise. application test circuit is shown in figure 6 and table 1. iip3 test condition: f rf1 -f rf2 = 1 mhz with input power of -10 dbm per tone. figure 17. nf vs frequency vs temperature figure 18. gain vs frequency vs temperature figure 19. iip3 vs frequency vs temperature figure 20. op1db vs frequency vs temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 frequency (ghz) nf (db) 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 frequency (ghz) 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 frequency (ghz) 85 c 25 c -40 c 85 c 25 c -40 c 12 14 16 18 20 22 24 26 28 30 32 iip3 (dbm) 16 17 18 19 20 21 22 23 24 25 op1db(dbm) 85 c 25 c -40 c 85 c 25 c -40 c
9 figure 21. input return loss, output return loss, gain, reverse isolation vs frequency figure 22. k-factor vs frequency vs temperature figure 23. idd vs rb figure 24. idd vs v pwrdwn 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v pwrdwn (v) idd (ma) k-factor 85 c 25 c -40 c 02468101214161820 0.5 1.0 1.5 2.0 2.5 0.0 3.0 frequency (ghz) frequency (ghz) 1.5 2.0 2.5 3.0 3.5 4.0 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -35 25 db(s(2,1)) db(s(1,1)) db(s(2,2)) db(s(1,2)) 100 c 85 c 25 c -40 c 0 20 40 60 80 100 120 rb (ohm) idd (ma) 0 200 400 600 800 1000 1200
10 figure 25. rfinput and rfoutput reference plane typical scattering parameters, vdd = 4.8 v, idd = 84 ma lna spar (100 mhz C 20 ghz) freq (ghz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 0.1 0.052 -25.318 34.68 152.786 -47.737 91.863 -4.011 -28.89 0.5 -3.786 -94.894 28.92 107.281 -37.408 58.237 -9.104 -52.056 0.7 -4.926 -113.237 26.654 95.227 -35.752 55.654 -10.055 -57.82 0.9 -5.619 -126.296 24.794 85.752 -34.427 54.436 -10.498 -62.723 1.0 -5.94 -130.828 24.002 81.827 -33.793 54.206 -10.523 -63.981 1 -6.855 -149.182 20.776 64.411 -31.307 51.726 -10.416 -74.85 1.5 -6.979 -155.224 19.732 57.966 -30.494 50.16 -10.335 -80.854 1.7 -7.065 -160.403 18.78 51.816 -29.76 48.458 -10.19 -86.86 1.9 -7.111 -162.698 18.329 48.898 -29.413 47.834 -10.067 -89.923 2.0 -7.134 -172.674 16.343 34.267 -27.955 42.754 -9.537 -104.635 2.5 -7.136 179.587 14.633 20.497 -26.738 37.613 -8.876 -118.233 3 -7.142 173.225 13.156 7.35 -25.665 32.748 -8.157 -130.639 3.5 -7.139 167.248 11.896 -4.959 -24.685 27.439 -7.477 -143.5 4 -7.089 161.143 10.78 -17.688 -23.859 21.999 -7.005 -155.432 4.5 -6.942 155.016 9.656 -30.521 -23.2 16.433 -6.443 -167.299 5 -6.655 148.942 8.55 -43.17 -22.633 11 -5.941 -178.746 5.5 -6.451 142.125 7.548 -55.893 -22.01 5.398 -5.508 169.605 6 -5.788 130.272 5.404 -80.204 -21.138 -5.826 -4.575 148.209 7 -5.04 122.162 3.238 -102.483 -20.538 -15.36 -3.749 131.73 8 -4.687 113.451 1.055 -123.348 -19.722 -23.213 -3.697 119.517 9 -4.53 100.173 -0.705 -145.751 -18.579 -35.202 -2.821 101.483 10 -4.256 84.617 -3.251 -170.507 -18.185 -49.114 -2.62 75.099 11 -3.95 69.227 -6.332 165.37 -17.868 -64.111 -2.273 51.688 12 -3.737 53.796 -10.138 151.871 -18.239 -71.411 -3.688 41.604 13 -3.546 40.2 -12.417 132.898 -16.923 -83.447 -2.495 39.518 14 -3.424 31.813 -16.055 116.123 -16.237 -95.104 -2.974 25.468 15 -3.498 23.38 -20.865 103.357 -15.662 -105.573 -3.854 8.667 16 -3.526 11.48 -28.925 85.718 -15.097 -123.669 -3.569 -9.967 17 -3.178 -0.579 -41.317 -143.263 -15.974 -133.494 -3.394 -14.401 18 -2.789 -13.818 -28.286 -139.464 -16.249 -148.305 -2.439 -20.145 19 -2.6 -28.557 -24.254 -152.264 -16.13 -161.015 -2.919 -18.344 20 0.052 -25.318 34.68 152.786 -47.737 91.863 -4.011 -28.89 rfinput reference plane rfoutput reference plane [2] [rfinput] [1] [nu] [3] [vbias2] [4] [nu] [7] [rfoutput] [8] [nu] [6] [pwrdwn] [5] [vbias1] bias
11 dfn2x2 package dimensions notes: 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold ash and metal burr. part number ordering information part number no. of devices container MGA-638P8-BLKG 100 antistatic bag mga-638p8-tr1g 3000 7 inch reel typical noise parameters, vdd = 4.8 v, idd = 84 ma freq ghz fmin db ? opt mag. ? opt ang. r n/50 1.9 0.656 0.193 152.8 0.044 2 0.664 0.206 156.4 0.040 2.2 0.678 0.234 163.5 0.035 2.5 0.704 0.274 174.2 0.034 2.7 0.736 0.301 181.4 0.036 3.3 0.958 0.383 202.8 0.045 3.5 1.12 0.41 209.9 0.045 notes: 1. the fmin values are based on noise fi gure measurements at 100 diff erent impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in figure 25. p i n 1 do t b y mar ki ng 2.00 0. 1 0 2.00 0. 1 0 38 x 0.20 ref. 0.0 C 0.05 0.75 0. 1 0 0.60 0.05 ex p. dap 0.35 0.05 0.25 0.05 1 .20 0.05 ex p. dap 1 .50 ref. 0.50 bsc p i n #1 i d e n tifi ca ti on r0. 1 0 t op view s i d e view bo tt om view
12 recommended pcb land pattern and stencil design pcb land pattern stencil design combines pcb & stencil design all dimension are in millimeters 0.50?6x 0.25?8x r0.15?4x 0.45?8x 0.30?3x 0.50?2x 1.20 1.50 0.50 0.05 (all sm gaps) 2.20 1.75 0.00 0.80 0.50?6x 0.22?8x 0.40?8x 0.170?2x 0.48?2x 0.21 1.50 1.72 2.16 1.75 0.56?3x 0.50?6x r0.15?4x 0.17?2x 0.50 1.50 0.21 1.75 0.56?3x metal surface soldermask open notes: 1. stencil thickness is 0.1 mm (4 mils). 2. all dimensions are in mm unless otherwise specifi ed.
13 tape dimensions 10 max ++ 10 max a o b o t 1 t t k o d 1 f e p 2 p o p d w description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 8.00 0.10 0.254 0.02 0.315 0.012 0.315 0.004 0.010 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.0004 cover tape device orientation user feed direction cover tape carrier tape reel 8 mm 4 mm 38x 38x 38x 38x
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2011 avago technologies. all rights reserved. av02-2993en - september 29, 2011 reel dimensions C 7 inch ps 6 ps 6 back view ?178.00.5 ?55.00.5 6.25mm embossed letters lettering thickness: 1.6mm see detail "x" slot hole "b" slot hole(2x) 180 apart. slot hole "a": 3.00.5mm(1x) slot hole "b": 2.50.5mm(1x) ?13.0 65 45 r10.65 45 r5.2 embossed ribs raised: 0.25mm, width: 1.25mm 18.0* max. ?51.20.3 ?178.00.5 recycle logo front view 120 1.5 min. ?20.2 min. -0.2 +0.5 detail "x" -0.0 +1.5* 12.4 detail "y" (slot hole) 3.5 1.0 see detail "y" front back front back slot hole "a" ?178.00.5

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